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ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
ANHUI CRYSTRO CRYSTAL MATERIALS CO., LTD. INNOVATOR FOR MAGNETO OPTICAL CRYSTALS
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3inch 0.5mm LaAlO3 Lanthanum Aluminate Single Crystals Insoluble

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3inch 0.5mm LaAlO3 Lanthanum Aluminate Single Crystals Insoluble

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Brand Name : Crystro

Model Number : CR210122-3

Certification : SGS

Place of Origin : China

MOQ : 1pc

Price : Negotiable

Payment Terms : T/T, Western Union, MoneyGram, Paypal

Supply Ability : 1000pcs/month

Delivery Time : 3-4 weeks

Packaging Details : 1000 clean room, 100 clean bag or single box packaging

Material : 3inch diameter Laalo3 wafer

Size : 3inchx0.5mm，3inchx0.6mm

Melt point(℃) : 2080 ℃

Surface finish : < 10A

Orientation : <100>,<111>

Redirection precision : ±0.2°

Density : 6.52(g/cm3)

Type : Flats

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3inch diameter Laalo3 wafer

Lanthanum aluminate (LaAlO3) substrate single crystal is the most important industrialized, large-size high-temperature
superconducting thin film single crystal substrate material. It is grown by Czochralski method, we can get two inches in diameter and larger single crystals and the substrate. It works with high-temperature superconducting materials lattice well matched, such as YBaCuO. Lower dielectric constant, low loss microwave, and thus suitable for production of high-temperature superconducting microwave electronic devices (such as high-temperature superconducting microwave filters in the remote communications.). Has great practical and potential applications.

Applications:

Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials

Major Parameters
Crystal structure M6(normal temperature) M3(>435℃)
Unit cell constant M6 a=5.357A c=13.22 A M3 a=3.821 A
Melt point(℃) 2080 ℃
Density 6.52(g/cm3)
Hardness 6-6.5(mohs)
Thermal expansion 9.4x10-6/℃
Dielectric constants ε=21
Secant loss(10ghz) ～3×10-4@300k,～0.6×10-4@77k
Color and appearance To anneal and conditions differ from brown to brownish
Chemical stability Insoluble in mineral acid at room temperature,soluble inH3PO4 at temperatures above 150 °C
Characteristics For microwave electron device
Growth method Czochralski method
Size Size upon request, the biggest diameter 3 inches
Ф15, Ф20, Ф1″, Ф2″, Ф2.6″, Ф3″
Thickness 0.5mm,1.0mm
Polishing Single or double
Crystal Orientation ＜100＞ ＜110＞ ＜111＞
redirection precision ±0.5°
Redirection the edge: 2°(special in 1°)
Angle of crystalline Special size and orientation are available upon request
Ra: ≤5Å(5µm×5µm)
Pack

1000 clean room, 100 clean bag or single box packaging

Main Advantages:

Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability


Product Tags:

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